advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 80v lower gate charge r ds(on) 45m fast switching characteristic i d 5.3a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 1 AP9685GM rating 80 + 20 5.3 0.02 parameter drain-source voltage gate-source voltage continuous drain current 3 linear derating factor storage temperature range continuous drain current 3 3.4 pulsed drain current 1 50 201211132 rohs-compliant product thermal data parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s s s s g d d d d so-8
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 80 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.073 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5.3a - - 45 m v gs =4.5v, i d =3.0a - - 50 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 9 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =64v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 19 30 nc q gs gate-source charge v ds =64v - 5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 10 - nc t d(on) turn-on delay time 2 v ds =40v - 11 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 -36- ns t f fall time v gs =10v - 22 - ns c iss input capacitance v gs =0v - 1710 2730 pf c oss output capacitance v ds =25v - 135 - pf c rss reverse transfer capacitance f=1.0mhz - 98 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =5a, v gs =0 v , - 42 - ns q rr reverse recovery charge di/dt=100a/s - 84 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad. 2 AP9685GM
AP9685GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 60 70 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 6.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 50 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c v g = 3.0 v 10v 6.0v 5.0v 4.5v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5.3a v g =10v 0.5 1 1.5 2 2.5 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 36 40 44 48 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9685GM t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =40v v ds =50v v ds =64v i d =5a 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) pdm duty factor = t/t peak t j = p dm x r thja + t a r thja = 125 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc
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